STI33N60M2
manufacturer:
STMicroelectronics
Description:
MOSFET N-CH 600V 26A I2PAK
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-262-3 Long Leads, I²Pak, TO-262AA
Gate Charge (Qg) (Max) @ Vgs:
45.5 NC @ 10 V
Rds On (Max) @ Id, Vgs:
125mOhm @ 13A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
600 V
Vgs (Max):
±25V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1781 PF @ 100 V
Mounting Type:
Through Hole
Series:
MDmesh™ II Plus
Supplier Device Package:
I2PAK (TO-262)
Mfr:
STMicroelectronics
Current - Continuous Drain (Id) @ 25°C:
26A (Tc)
Power Dissipation (Max):
190W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STI33
Introduction
N-Channel 600 V 26A (Tc) 190W (Tc) Through Hole I2PAK (TO-262)
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