IPB50R199CPATMA1
manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 550V 17A TO263-3
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3.5V @ 660µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
45 NC @ 10 V
Rds On (Max) @ Id, Vgs:
199mOhm @ 9.9A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Drain To Source Voltage (Vdss):
550 V
Vgs (Max):
±20V
Product Status:
Not For New Designs
Input Capacitance (Ciss) (Max) @ Vds:
1800 PF @ 100 V
Mounting Type:
Surface Mount
Series:
CoolMOS™
Supplier Device Package:
PG-TO263-3-2
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
17A (Tc)
Power Dissipation (Max):
139W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IPB50R199
Introduction
N-Channel 550 V 17A (Tc) 139W (Tc) Surface Mount PG-TO263-3-2
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