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SIHH11N65EF-T1-GE3
manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 650V 11A PPAK 8 X 8
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs:
70 NC @ 10 V
Rds On (Max) @ Id, Vgs:
382mOhm @ 6A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
650 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1243 PF @ 100 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
PowerPAK® 8 X 8
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
11A (Tc)
Power Dissipation (Max):
130W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SIHH11
Model Number:
SIHH11N65EF-T1-GE3
Introduction
N-Channel 650 V 11A (Tc) 130W (Tc) Surface Mount PowerPAK® 8 x 8
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