TK16A60W,S4X
manufacturer:
Toshiba Semiconductor and Storage
Description:
MOSFET N-CH 600V 15.8A TO220
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
40 NC @ 10 V
FET Feature:
-
Product Status:
Active
Mounting Type:
Through Hole
Package:
Tube
Input Capacitance (Ciss) (Max) @ Vds:
1350 PF @ 300 V
Series:
DTMOSIV
Vgs (Max):
±30V
Vgs(th) (Max) @ Id:
3.7V @ 790µA
Supplier Device Package:
TO-220SIS
Rds On (Max) @ Id, Vgs:
190mOhm @ 7.9A, 10V
Mfr:
Toshiba Semiconductor And Storage
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
40W (Tc)
Package / Case:
TO-220-3 Full Pack
Drain To Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
15.8A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TK16A60
Introduction
N-Channel 600 V 15.8A (Ta) 40W (Tc) Through Hole TO-220SIS
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