R6010ANX
manufacturer:
Rohm Semiconductor
Description:
MOSFET N-CH 600V 10A TO220FM
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Product Status:
Not For New Designs
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
-
Series:
-
Vgs (Max):
±30V
Package:
Bulk
Supplier Device Package:
TO-220FM
Rds On (Max) @ Id, Vgs:
-
Mfr:
Rohm Semiconductor
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
50W (Tc)
Package / Case:
TO-220-3 Full Pack
Drain To Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
10A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
R6010
Introduction
N-Channel 600 V 10A (Ta) 50W (Tc) Through Hole TO-220FM
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