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STU7NM60N

manufacturer:
STMicroelectronics
Description:
MOSFET N-CH 600V 5A IPAK
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
Gate Charge (Qg) (Max) @ Vgs:
14 NC @ 10 V
Rds On (Max) @ Id, Vgs:
900mOhm @ 2.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
600 V
Vgs (Max):
±25V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
363 PF @ 50 V
Mounting Type:
Through Hole
Series:
MDmesh™ II
Supplier Device Package:
TO-251 (IPAK)
Mfr:
STMicroelectronics
Current - Continuous Drain (Id) @ 25°C:
5A (Tc)
Power Dissipation (Max):
45W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STU7NM60
Introduction
N-Channel 600 V 5A (Tc) 45W (Tc) Through Hole TO-251 (IPAK)
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