SIHA21N65EF-E3
manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 650V 21A TO220
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Gate Charge (Qg) (Max) @ Vgs:
106 NC @ 10 V
Rds On (Max) @ Id, Vgs:
180mOhm @ 11A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
650 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
2322 PF @ 100 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220 Full Pack
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
21A (Tc)
Power Dissipation (Max):
35W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SIHA21
Introduction
N-Channel 650 V 21A (Tc) 35W (Tc) Through Hole TO-220 Full Pack
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