IPL65R165CFDAUMA1
manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 650V 21.3A 4VSON
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4.5V @ 900µA
Operating Temperature:
-40°C ~ 150°C (TJ)
Package / Case:
4-PowerTSFN
Gate Charge (Qg) (Max) @ Vgs:
86 NC @ 10 V
Rds On (Max) @ Id, Vgs:
165mOhm @ 9.3A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Drain To Source Voltage (Vdss):
650 V
Vgs (Max):
±20V
Product Status:
Last Time Buy
Input Capacitance (Ciss) (Max) @ Vds:
2340 PF @ 100 V
Mounting Type:
Surface Mount
Series:
CoolMOS™
Supplier Device Package:
PG-VSON-4
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
21.3A (Tc)
Power Dissipation (Max):
195W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IPL65R
Introduction
N-Channel 650 V 21.3A (Tc) 195W (Tc) Surface Mount PG-VSON-4
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