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SIHP12N50C-E3
manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 500V 12A TO220AB
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
48 NC @ 10 V
FET Feature:
-
Product Status:
Active
Mounting Type:
Through Hole
Package:
Tube
Input Capacitance (Ciss) (Max) @ Vds:
1375 PF @ 25 V
Series:
-
Vgs (Max):
±30V
Vgs(th) (Max) @ Id:
5V @ 250µA
Mfr:
Vishay Siliconix
Rds On (Max) @ Id, Vgs:
555mOhm @ 4A, 10V
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
208W (Tc)
Package / Case:
TO-220-3
Drain To Source Voltage (Vdss):
500 V
Current - Continuous Drain (Id) @ 25°C:
12A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SIHP12
Model Number:
SIHP12N50C-E3
Introduction
N-Channel 500 V 12A (Tc) 208W (Tc) Through Hole
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IRLL1503TR |
MOSFET N-CH 30V SOT223
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IRFZ44RSTRR |
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IRF7822TRL |
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IRF7822TRR |
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IRF644NS |
MOSFET N-CH 250V 14A D2PAK
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IRFB13N50A |
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|
IRFP460P |
MOSFET N-CH 500V 20A TO247-3
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IRFB17N50L |
MOSFET N-CH 500V 16A TO220AB
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IRLZ44L |
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IRLZ34L |
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