DMTH10H1M7STLW-13
manufacturer:
Diodes Incorporated
Description:
MOSFET BVDSS: 61V~100V POWERDI10
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerSFN
Gate Charge (Qg) (Max) @ Vgs:
147 NC @ 10 V
Rds On (Max) @ Id, Vgs:
2mOhm @ 30A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Drain To Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
9871 PF @ 50 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
POWERDI1012-8
Mfr:
Diodes Incorporated
Current - Continuous Drain (Id) @ 25°C:
250A (Tc)
Power Dissipation (Max):
6W (Ta), 250W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
DMTH10
Introduction
N-Channel 100 V 250A (Tc) 6W (Ta), 250W (Tc) Surface Mount POWERDI1012-8
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