NVB099N65S3
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
61 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds:
2480 PF @ 400 V
Series:
SuperFET® III
Vgs (Max):
±30V
Vgs(th) (Max) @ Id:
4.5V @ 740µA
Supplier Device Package:
D²PAK-3 (TO-263-3)
Rds On (Max) @ Id, Vgs:
99mOhm @ 15A, 10V
Mfr:
Onsemi
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
227W (Tc)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Drain To Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
30A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Introduction
N-Channel 650 V 30A (Tc) 227W (Tc) Surface Mount D²PAK-3 (TO-263-3)
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