IPB025N10N3GE8187ATMA1
manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 100V 180A TO263-7
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3.5V @ 275µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-7, D²Pak (6 Leads + Tab)
Gate Charge (Qg) (Max) @ Vgs:
206 NC @ 10 V
Rds On (Max) @ Id, Vgs:
2.5mOhm @ 100A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Package:
Tape & Reel (TR)
Drain To Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Product Status:
Not For New Designs
Input Capacitance (Ciss) (Max) @ Vds:
14800 PF @ 50 V
Mounting Type:
Surface Mount
Series:
OptiMOS™
Supplier Device Package:
PG-TO263-7
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
180A (Tc)
Power Dissipation (Max):
300W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IPB025
Introduction
N-Channel 100 V 180A (Tc) 300W (Tc) Surface Mount PG-TO263-7
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