R6024KNZ1C9
manufacturer:
Rohm Semiconductor
Description:
MOSFET N-CHANNEL 600V 24A TO247
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
45 NC @ 10 V
Product Status:
Obsolete
Mounting Type:
Through Hole
Package:
Tube
Input Capacitance (Ciss) (Max) @ Vds:
2000 PF @ 25 V
Series:
-
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
5V @ 1mA
Supplier Device Package:
TO-247
Rds On (Max) @ Id, Vgs:
165mOhm @ 11.3A, 10V
Mfr:
Rohm Semiconductor
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
245W (Tc)
Package / Case:
TO-247-3
Drain To Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
24A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Introduction
N-Channel 600 V 24A (Tc) 245W (Tc) Through Hole TO-247
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