IXTA1R4N120P-TRL
manufacturer:
IXYS
Description:
MOSFET N-CH 1200V 1.4A TO263
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4.5V @ 100µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
24.8 NC @ 10 V
Rds On (Max) @ Id, Vgs:
13Ohm @ 700mA, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Drain To Source Voltage (Vdss):
1200 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
666 PF @ 25 V
Mounting Type:
Surface Mount
Series:
Polar
Supplier Device Package:
TO-263 (D2Pak)
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
1.4A (Tc)
Power Dissipation (Max):
86W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXTA1
Introduction
N-Channel 1200 V 1.4A (Tc) 86W (Tc) Surface Mount TO-263 (D2Pak)
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