TSM80N1R2CI C0G
manufacturer:
Taiwan Semiconductor Corporation
Description:
MOSFET N-CH 800V 5.5A ITO220AB
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3 Full Pack, Isolated Tab
Gate Charge (Qg) (Max) @ Vgs:
19.4 NC @ 10 V
Rds On (Max) @ Id, Vgs:
1.2Ohm @ 1.8A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
800 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
685 PF @ 100 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
ITO-220AB
Mfr:
Taiwan Semiconductor Corporation
Current - Continuous Drain (Id) @ 25°C:
5.5A (Tc)
Power Dissipation (Max):
25W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TSM80
Introduction
N-Channel 800 V 5.5A (Tc) 25W (Tc) Through Hole ITO-220AB
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