IPI120N04S302AKSA1
manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 40V 120A TO262-3
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 230µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-262-3 Long Leads, I²Pak, TO-262AA
Gate Charge (Qg) (Max) @ Vgs:
210 NC @ 10 V
Rds On (Max) @ Id, Vgs:
2.3mOhm @ 80A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Product Status:
Not For New Designs
Input Capacitance (Ciss) (Max) @ Vds:
14300 PF @ 25 V
Mounting Type:
Through Hole
Series:
OptiMOS™
Supplier Device Package:
PG-TO262-3
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
120A (Tc)
Power Dissipation (Max):
300W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IPI120
Introduction
N-Channel 40 V 120A (Tc) 300W (Tc) Through Hole PG-TO262-3
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