AUIRFSL4010
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Type:
N-Channel
Product Status:
Not For New Designs
Mounting Type:
Through Hole
Package:
Tube
Vgs(th) (Max) @ Id:
4V @ 250µA
Series:
HEXFET®
Gate Charge (Qg) (Max) @ Vgs:
215 NC @ 10 V
Supplier Device Package:
TO-262
Rds On (Max) @ Id, Vgs:
4.7mOhm @ 106A, 10V
Mfr:
Infineon Technologies
Operating Temperature:
-55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds:
9575 PF @ 50 V
Drain To Source Voltage (Vdss):
100 V
Power Dissipation (Max):
375W (Tc)
Package / Case:
TO-262-3 Long Leads, I²Pak, TO-262AA
Current - Continuous Drain (Id) @ 25°C:
180A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Introduction
N-Channel 100 V 180A (Tc) 375W (Tc) Through Hole TO-262
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Stock:
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