IXTA10P15T
manufacturer:
IXYS
Description:
MOSFET P-CH 150V 10A TO263
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
36 NC @ 10 V
Rds On (Max) @ Id, Vgs:
350mOhm @ 5A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
150 V
Vgs (Max):
±15V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
2210 PF @ 25 V
Mounting Type:
Surface Mount
Series:
TrenchP™
Supplier Device Package:
TO-263 (D2Pak)
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
10A (Tc)
Power Dissipation (Max):
83W (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXTA10
Introduction
P-Channel 150 V 10A (Tc) 83W (Ta) Surface Mount TO-263 (D2Pak)
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