TSM60NB190CM2 RNG
manufacturer:
Taiwan Semiconductor Corporation
Description:
MOSFET N-CH 600V 18A TO263
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
31 NC @ 10 V
Rds On (Max) @ Id, Vgs:
190mOhm @ 6A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1273 PF @ 100 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
TO-263 (D²Pak)
Mfr:
Taiwan Semiconductor Corporation
Current - Continuous Drain (Id) @ 25°C:
18A (Tc)
Power Dissipation (Max):
150.6W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TSM60
Introduction
N-Channel 600 V 18A (Tc) 150.6W (Tc) Surface Mount TO-263 (D²Pak)
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