IXFA4N85X
manufacturer:
IXYS
Description:
MOSFET N-CH 850V 3.5A TO263
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
7 NC @ 10 V
Rds On (Max) @ Id, Vgs:
2.5Ohm @ 2A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
850 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
247 PF @ 25 V
Mounting Type:
Surface Mount
Series:
HiPerFET™, Ultra X
Supplier Device Package:
TO-263 (IXFA)
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
3.5A (Tc)
Power Dissipation (Max):
150W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFA4N85
Introduction
N-Channel 850 V 3.5A (Tc) 150W (Tc) Surface Mount TO-263 (IXFA)
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