SIHP38N60EF-GE3
manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 600V 40A TO220AB
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
189 NC @ 10 V
Rds On (Max) @ Id, Vgs:
70mOhm @ 23.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
3576 PF @ 100 V
Mounting Type:
Through Hole
Series:
EF
Supplier Device Package:
TO-220AB
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
40A (Tc)
Power Dissipation (Max):
313W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SIHP38
Introduction
N-Channel 600 V 40A (Tc) 313W (Tc) Through Hole TO-220AB
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