IXTA60N20T
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
73 NC @ 10 V
Rds On (Max) @ Id, Vgs:
40mOhm @ 30A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
200 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
4530 PF @ 25 V
Mounting Type:
Surface Mount
Series:
Trench
Supplier Device Package:
TO-263AA
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
60A (Tc)
Power Dissipation (Max):
500W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXTA60
Introduction
N-Channel 200 V 60A (Tc) 500W (Tc) Surface Mount TO-263AA
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