APT7M120S
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
80 NC @ 10 V
Rds On (Max) @ Id, Vgs:
2.1Ohm @ 3A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain To Source Voltage (Vdss):
1200 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
2565 PF @ 25 V
Mounting Type:
Surface Mount
Series:
POWER MOS 8™
Supplier Device Package:
D3Pak
Mfr:
Microchip Technology
Current - Continuous Drain (Id) @ 25°C:
8A (Tc)
Power Dissipation (Max):
335W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
APT7M120
Introduction
N-Channel 1200 V 8A (Tc) 335W (Tc) Surface Mount D3Pak
Send RFQ
Stock:
MOQ: