IXFA6N120P-TRL
manufacturer:
IXYS
Description:
MOSFET N-CH 1200V 6A TO263
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
92 NC @ 10 V
Rds On (Max) @ Id, Vgs:
2.4Ohm @ 500mA, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Drain To Source Voltage (Vdss):
1200 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
2830 PF @ 25 V
Mounting Type:
Surface Mount
Series:
HiPerFET™, Polar
Supplier Device Package:
TO-263AA (IXFA)
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
6A (Tc)
Power Dissipation (Max):
250W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFA6N120
Introduction
N-Channel 1200 V 6A (Tc) 250W (Tc) Surface Mount TO-263AA (IXFA)
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