IXFQ30N60X
manufacturer:
IXYS
Description:
MOSFET N-CH 600V 30A TO3P
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4.5V @ 4mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-3P-3, SC-65-3
Gate Charge (Qg) (Max) @ Vgs:
56 NC @ 10 V
Rds On (Max) @ Id, Vgs:
155mOhm @ 15A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
2270 PF @ 25 V
Mounting Type:
Through Hole
Series:
HiPerFET™, Ultra X
Supplier Device Package:
TO-3P
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
30A (Tc)
Power Dissipation (Max):
500W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFQ30
Introduction
N-Channel 600 V 30A (Tc) 500W (Tc) Through Hole TO-3P
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