MSC180SMA120SA
manufacturer:
Microchip Technology
Description:
MOSFET SIC 1200 V 180 MOHM TO-26
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3.26V @ 500µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-8, DPak (7 Leads + Tab)
Gate Charge (Qg) (Max) @ Vgs:
34 NC @ 20 V
Rds On (Max) @ Id, Vgs:
225mOhm @ 8A, 20V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
20V
Package:
Tube
Drain To Source Voltage (Vdss):
1200 V
Vgs (Max):
+23V, -10V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
510 PF @ 1000 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
D2PAK-7
Mfr:
Microchip Technology
Current - Continuous Drain (Id) @ 25°C:
21A (Tc)
Power Dissipation (Max):
125W (Tc)
Technology:
SiCFET (Silicon Carbide)
Base Product Number:
MSC180
Introduction
N-Channel 1200 V 21A (Tc) 125W (Tc) Surface Mount D2PAK-7
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