IXFR4N100Q
manufacturer:
IXYS
Description:
MOSFET N-CH 1000V 3.5A ISOPLS247
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5V @ 1.5mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3
Gate Charge (Qg) (Max) @ Vgs:
39 NC @ 10 V
Rds On (Max) @ Id, Vgs:
3Ohm @ 2A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Box
Drain To Source Voltage (Vdss):
1000 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1050 PF @ 25 V
Mounting Type:
Through Hole
Series:
HiPerFET™, Q Class
Supplier Device Package:
ISOPLUS247™
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
3.5A (Tc)
Power Dissipation (Max):
80W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFR4N100
Introduction
N-Channel 1000 V 3.5A (Tc) 80W (Tc) Through Hole ISOPLUS247™
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