IXKC20N60C
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3.9V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
ISOPLUS220™
Gate Charge (Qg) (Max) @ Vgs:
114 NC @ 10 V
Rds On (Max) @ Id, Vgs:
190mOhm @ 16A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
600 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
2400 PF @ 25 V
Mounting Type:
Through Hole
Series:
CoolMOS™
Supplier Device Package:
ISOPLUS220™
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
15A (Tc)
Power Dissipation (Max):
-
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXKC20
Introduction
N-Channel 600 V 15A (Tc) Through Hole ISOPLUS220™
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