APT30M70BVFRG
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3
Gate Charge (Qg) (Max) @ Vgs:
225 NC @ 10 V
Rds On (Max) @ Id, Vgs:
70mOhm @ 500mA, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
300 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
5870 PF @ 25 V
Mounting Type:
Through Hole
Series:
POWER MOS V®
Supplier Device Package:
TO-247 [B]
Mfr:
Microchip Technology
Current - Continuous Drain (Id) @ 25°C:
48A (Tc)
Power Dissipation (Max):
370W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
APT30M70
Introduction
N-Channel 300 V 48A (Tc) 370W (Tc) Through Hole TO-247 [B]
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