APT66M60B2
manufacturer:
Microchip Technology
Description:
MOSFET N-CH 600V 70A T-MAX
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5V @ 2.5mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3 Variant
Gate Charge (Qg) (Max) @ Vgs:
330 NC @ 10 V
Rds On (Max) @ Id, Vgs:
100mOhm @ 33A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
13190 PF @ 25 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
T-MAX™ [B2]
Mfr:
Microchip Technology
Current - Continuous Drain (Id) @ 25°C:
70A (Tc)
Power Dissipation (Max):
1135W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
APT66M60
Introduction
N-Channel 600 V 70A (Tc) 1135W (Tc) Through Hole T-MAX™ [B2]
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