IXFT26N100XHV
manufacturer:
IXYS
Description:
MOSFET N-CH 1000V 26A TO268HV
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
6V @ 4mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Gate Charge (Qg) (Max) @ Vgs:
113 NC @ 10 V
Rds On (Max) @ Id, Vgs:
320mOhm @ 500mA, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
1000 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
3290 PF @ 25 V
Mounting Type:
Surface Mount
Series:
HiPerFET™, Ultra X
Supplier Device Package:
TO-268HV (IXFT)
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
26A (Ta)
Power Dissipation (Max):
860mW (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFT26
Introduction
N-Channel 1000 V 26A (Ta) 860mW (Ta) Surface Mount TO-268HV (IXFT)
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