APT26F120B2
manufacturer:
Microchip Technology
Description:
MOSFET N-CH 1200V 27A T-MAX
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5V @ 2.5mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3 Variant
Gate Charge (Qg) (Max) @ Vgs:
300 NC @ 10 V
Rds On (Max) @ Id, Vgs:
650mOhm @ 14A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
1200 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
9670 PF @ 25 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
T-MAX™
Mfr:
Microchip Technology
Current - Continuous Drain (Id) @ 25°C:
27A (Tc)
Power Dissipation (Max):
1135W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
APT26F120
Introduction
N-Channel 1200 V 27A (Tc) 1135W (Tc) Through Hole T-MAX™
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