IXFB70N60Q2
manufacturer:
IXYS
Description:
MOSFET N-CH 600V 70A PLUS264
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5.5V @ 8mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-264-3, TO-264AA
Gate Charge (Qg) (Max) @ Vgs:
265 NC @ 10 V
Rds On (Max) @ Id, Vgs:
88mOhm @ 35A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Product Status:
Not For New Designs
Input Capacitance (Ciss) (Max) @ Vds:
12000 PF @ 25 V
Mounting Type:
Through Hole
Series:
HiPerFET™, Q2 Class
Supplier Device Package:
PLUS264™
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
70A (Tc)
Power Dissipation (Max):
890W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFB70
Introduction
N-Channel 600 V 70A (Tc) 890W (Tc) Through Hole PLUS264™
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