IXTR210P10T
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3
Gate Charge (Qg) (Max) @ Vgs:
740 NC @ 10 V
Rds On (Max) @ Id, Vgs:
8mOhm @ 105A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
100 V
Vgs (Max):
±15V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
69500 PF @ 25 V
Mounting Type:
Through Hole
Series:
TrenchP™
Supplier Device Package:
ISOPLUS247™
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
195A (Tc)
Power Dissipation (Max):
595W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXTR210
Introduction
P-Channel 100 V 195A (Tc) 595W (Tc) Through Hole ISOPLUS247™
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