APL602B2G
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Product Status:
Active
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
4V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds:
9000 PF @ 25 V
Series:
-
Vgs (Max):
±30V
Package:
Tube
Supplier Device Package:
T-MAX™ [B2]
Rds On (Max) @ Id, Vgs:
125mOhm @ 24.5A, 12V
Mfr:
Microchip Technology
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
12V
Power Dissipation (Max):
730W (Tc)
Package / Case:
TO-247-3 Variant
Drain To Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
49A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
APL602
Introduction
N-Channel 600 V 49A (Tc) 730W (Tc) Through Hole T-MAX™ [B2]
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