IXFN30N120P
manufacturer:
IXYS
Description:
MOSFET N-CH 1200V 30A SOT-227B
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
6.5V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-227-4, MiniBLOC
Gate Charge (Qg) (Max) @ Vgs:
310 NC @ 10 V
Rds On (Max) @ Id, Vgs:
350mOhm @ 500mA, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
1200 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
19000 PF @ 25 V
Mounting Type:
Chassis Mount
Series:
HiPerFET™, Polar
Supplier Device Package:
SOT-227B
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
30A (Tc)
Power Dissipation (Max):
890W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFN30
Introduction
N-Channel 1200 V 30A (Tc) 890W (Tc) Chassis Mount SOT-227B
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