APTM120DA30CT1G
manufacturer:
Microchip Technology
Description:
MOSFET N-CH 1200V 31A SP1
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5V @ 2.5mA
Operating Temperature:
-40°C ~ 150°C (TJ)
Package / Case:
SP1
Gate Charge (Qg) (Max) @ Vgs:
560 NC @ 10 V
Rds On (Max) @ Id, Vgs:
360mOhm @ 25A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain To Source Voltage (Vdss):
1200 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
14560 PF @ 25 V
Mounting Type:
Chassis Mount
Series:
POWER MOS 8™
Supplier Device Package:
SP1
Mfr:
Microchip Technology
Current - Continuous Drain (Id) @ 25°C:
31A (Tc)
Power Dissipation (Max):
657W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
APTM120
Introduction
N-Channel 1200 V 31A (Tc) 657W (Tc) Chassis Mount SP1
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