PMCM6501VNEZ
manufacturer:
NXP USA Inc.
Description:
PMCM6501VNE - 12V, N-CHANNEL TRE
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
24 NC @ 4.5 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Bulk
Input Capacitance (Ciss) (Max) @ Vds:
920 PF @ 6 V
Series:
-
Vgs (Max):
±8V
Vgs(th) (Max) @ Id:
900mV @ 250µA
Supplier Device Package:
6-WLCSP (1.48x0.98)
Rds On (Max) @ Id, Vgs:
18mOhm @ 3A, 4.5V
Mfr:
NXP USA Inc.
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4.5V
Power Dissipation (Max):
556mW (Ta), 12.5W (Tc)
Package / Case:
6-XFBGA, WLCSP
Drain To Source Voltage (Vdss):
12 V
Current - Continuous Drain (Id) @ 25°C:
7.3A (Ta)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Introduction
N-Channel 12 V 7.3A (Ta) 556mW (Ta), 12.5W (Tc) Surface Mount 6-WLCSP (1.48x0.98)
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