YJG60G10A
manufacturer:
Yangzhou Yangjie Electronic Technology Co.,Ltd
Description:
N-CH MOSFET 100V 60A PDFN5060-8L
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
32 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds:
2431 PF @ 50 V
Series:
-
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
4V @ 250µA
Supplier Device Package:
8-PDFN (5x6)
Rds On (Max) @ Id, Vgs:
8.6mOhm @ 20A, 10V
Mfr:
Yangzhou Yangjie Electronic Technology Co.,Ltd
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
88W (Tc)
Package / Case:
8-PowerLDFN
Drain To Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
60A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Introduction
N-Channel 100 V 60A (Tc) 88W (Tc) Surface Mount 8-PDFN (5x6)
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