FDMS8570S
manufacturer:
onsemi
Description:
POWER FIELD-EFFECT TRANSISTOR, 2
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
425 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Bulk
Input Capacitance (Ciss) (Max) @ Vds:
2825 PF @ 13 V
Series:
PowerTrench®, SyncFET™
Vgs (Max):
±12V
Vgs(th) (Max) @ Id:
2.2V @ 1mA
Supplier Device Package:
8-PQFN (5x6)
Rds On (Max) @ Id, Vgs:
2.8mOhm @ 24A, 10V
Mfr:
Onsemi
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Power Dissipation (Max):
2.5W (Ta), 48W (Tc)
Package / Case:
8-PowerTDFN
Drain To Source Voltage (Vdss):
25 V
Current - Continuous Drain (Id) @ 25°C:
24A (Ta), 60A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Introduction
N-Channel 25 V 24A (Ta), 60A (Tc) 2.5W (Ta), 48W (Tc) Surface Mount 8-PQFN (5x6)
Send RFQ
Stock:
MOQ: