CSD16408Q5
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs:
8.9 NC @ 4.5 V
Rds On (Max) @ Id, Vgs:
4.5mOhm @ 25A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
25 V
Vgs (Max):
+16V, -12V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1300 PF @ 12.5 V
Mounting Type:
Surface Mount
Series:
NexFET™
Supplier Device Package:
8-VSONP (5x6)
Mfr:
Texas Instruments
Current - Continuous Drain (Id) @ 25°C:
22A (Ta), 113A (Tc)
Power Dissipation (Max):
3.1W (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
CSD16408
Introduction
N-Channel 25 V 22A (Ta), 113A (Tc) 3.1W (Ta) Surface Mount 8-VSONP (5x6)
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