IRFH8324TR2PBF
manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 30V 23A/90A PQFN
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
31 NC @ 10 V
Product Status:
Obsolete
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds:
2380 PF @ 10 V
Series:
HEXFET®
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
2.35V @ 50µA
Supplier Device Package:
PQFN (5x6)
Rds On (Max) @ Id, Vgs:
4.1mOhm @ 20A, 10V
Mfr:
Infineon Technologies
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Power Dissipation (Max):
3.6W (Ta), 54W (Tc)
Package / Case:
8-PowerTDFN
Drain To Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
23A (Ta), 90A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Introduction
N-Channel 30 V 23A (Ta), 90A (Tc) 3.6W (Ta), 54W (Tc) Surface Mount PQFN (5x6)
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