FDPF5N50NZF
manufacturer:
onsemi
Description:
POWER FIELD-EFFECT TRANSISTOR, 4
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
12 NC @ 10 V
Product Status:
Active
Mounting Type:
Through Hole
Package:
Bulk
Input Capacitance (Ciss) (Max) @ Vds:
485 PF @ 25 V
Series:
UniFET-II™
Vgs (Max):
±25V
Vgs(th) (Max) @ Id:
5V @ 250µA
Supplier Device Package:
TO-220F-3
Rds On (Max) @ Id, Vgs:
1.75Ohm @ 2.1A, 10V
Mfr:
Onsemi
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
30W (Tc)
Package / Case:
TO-220-3 Full Pack
Drain To Source Voltage (Vdss):
500 V
Current - Continuous Drain (Id) @ 25°C:
4.2A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Introduction
N-Channel 500 V 4.2A (Tc) 30W (Tc) Through Hole TO-220F-3
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