IPA80R1K4P7
manufacturer:
Infineon Technologies
Description:
POWER FIELD-EFFECT TRANSISTOR
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
10 NC @ 10 V
Product Status:
Active
Mounting Type:
Through Hole
Package:
Bulk
Input Capacitance (Ciss) (Max) @ Vds:
250 PF @ 500 V
Series:
CoolMOS™
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
3.5V @ 70µA
Supplier Device Package:
PG-TO220-3-31 Full Pack
Rds On (Max) @ Id, Vgs:
1.4Ohm @ 1.4A, 10V
Mfr:
Infineon Technologies
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
24W (Tc)
Package / Case:
TO-220-3 Full Pack
Drain To Source Voltage (Vdss):
800 V
Current - Continuous Drain (Id) @ 25°C:
4A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Introduction
N-Channel 800 V 4A (Tc) 24W (Tc) Through Hole PG-TO220-3-31 Full Pack
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