IPD30N06S2L13ATMA1
manufacturer:
Infineon Technologies
Description:
IPD30N06 - 55V-60V N-CHANNEL AUT
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
69 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Bulk
Input Capacitance (Ciss) (Max) @ Vds:
1800 PF @ 25 V
Series:
OptiMOS™
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
2V @ 80µA
Supplier Device Package:
PG-TO252-3-11
Rds On (Max) @ Id, Vgs:
13mOhm @ 30A, 10V
Mfr:
Infineon Technologies
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Power Dissipation (Max):
136W (Tc)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Drain To Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
30A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Introduction
N-Channel 55 V 30A (Tc) 136W (Tc) Surface Mount PG-TO252-3-11
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