BUK9Y6R0-60E,115
manufacturer:
NXP USA Inc.
Description:
TRANSISTOR >30MHZ
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
39.4 NC @ 5 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Bulk
Input Capacitance (Ciss) (Max) @ Vds:
6319 PF @ 25 V
Series:
Automotive, AEC-Q101, TrenchMOS™
Vgs (Max):
±10V
Vgs(th) (Max) @ Id:
2.1V @ 1mA
Supplier Device Package:
LFPAK56, Power-SO8
Rds On (Max) @ Id, Vgs:
5.2mOhm @ 25A, 10V
Mfr:
NXP USA Inc.
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V
Power Dissipation (Max):
195W (Tc)
Package / Case:
SC-100, SOT-669
Drain To Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Introduction
N-Channel 60 V 100A (Tc) 195W (Tc) Surface Mount LFPAK56, Power-SO8
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