PSMN8R0-40BS,118
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
21 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Bulk
Input Capacitance (Ciss) (Max) @ Vds:
1262 PF @ 12 V
Series:
-
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
4V @ 1mA
Supplier Device Package:
D2PAK
Rds On (Max) @ Id, Vgs:
7.6mOhm @ 25A, 10V
Mfr:
NXP USA Inc.
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
86W (Tc)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Drain To Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
77A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Introduction
N-Channel 40 V 77A (Tc) 86W (Tc) Surface Mount D2PAK
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