PMV50EPEAR
manufacturer:
NXP USA Inc.
Description:
PMV50EPEA - 30 V, P-CHANNEL TREN
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs:
19.2 NC @ 10 V
Rds On (Max) @ Id, Vgs:
45mOhm @ 4.2A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Bulk
Drain To Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
793 PF @ 15 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-23
Mfr:
NXP USA Inc.
Current - Continuous Drain (Id) @ 25°C:
4.2A (Ta)
Power Dissipation (Max):
310mW (Ta), 455mW (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
PMV50
Introduction
P-Channel 30 V 4.2A (Ta) 310mW (Ta), 455mW (Tc) Surface Mount SOT-23
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