PMPB20EN,115
manufacturer:
NXP USA Inc.
Description:
MOSFET N-CH 30V 7.2A DFN2020MD-6
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
10.8 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Bulk
Input Capacitance (Ciss) (Max) @ Vds:
435 PF @ 10 V
Series:
-
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
2V @ 250µA
Supplier Device Package:
DFN1010B-6
Rds On (Max) @ Id, Vgs:
19.5mOhm @ 7A, 10V
Mfr:
NXP USA Inc.
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Power Dissipation (Max):
1.7W (Ta), 12.5W (Tc)
Package / Case:
6-XFDFN Exposed Pad
Drain To Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
7.2A (Ta)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Introduction
N-Channel 30 V 7.2A (Ta) 1.7W (Ta), 12.5W (Tc) Surface Mount DFN1010B-6
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