FDB2552
manufacturer:
onsemi
Description:
POWER FIELD-EFFECT TRANSISTOR, 5
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
51 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Bulk
Input Capacitance (Ciss) (Max) @ Vds:
2800 PF @ 25 V
Series:
PowerTrench®
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
4V @ 250µA
Supplier Device Package:
D²PAK (TO-263)
Rds On (Max) @ Id, Vgs:
36mOhm @ 16A, 10V
Mfr:
Onsemi
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Power Dissipation (Max):
150W (Tc)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Drain To Source Voltage (Vdss):
150 V
Current - Continuous Drain (Id) @ 25°C:
5A (Ta), 37A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Introduction
N-Channel 150 V 5A (Ta), 37A (Tc) 150W (Tc) Surface Mount D²PAK (TO-263)
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